A Reconfigurable 65nm SRAM achieving Voltage Scalability from 0.25-1.2V and Performance Scalability from 20kHz-200MHz
نویسندگان
چکیده
A 64kb SRAM array fabricated in 65nm lowpower CMOS operates from 250mV to 1.2V. This wide supply range is enabled by a combination of circuits optimized for both sub-Vt and above-Vt regimes. Reconfigurable circuits are used extensively, as low voltage assist circuits are required for functionality, but they must not limit performance during high voltage operation. The SRAM operates at 20kHz with a 250mV supply and 200MHz with a 1.2V supply. Over this range the leakage power scales by more than 50X.
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